Furthermore, the lack of dangling bonds at the interface between graphene and 2D semiconductors would suppress the appearance of interface states and charge traps. In this work, we demonstrate the integration of a 2D semiconductor in the form of monolayer MoS2 with graphene electrodes. The basic device functions as a field-effect transistor, with ohmic contacts and performance comparable to similar devices with metal contacts. We demonstrate this by adding a charge trapping layer in the form of a multilayer graphene floating gate, resulting in a new heterostructure capable of operating as a nonvolatile memory cell.
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Get e-Alerts Abstract This paper describes a procedure based on electrospinning for generating nanofibers of anatase with controllable diameters and porous structures. The average diameter of these ceramic nanofibers could be controlled in the range from 20 to nm by varying a number of parameters such as the ratio between PVP and titanium tetraisopropoxide, their concentrations in the alcohol solution, the strength of the electric field, and the feeding rate of the precursor solution.
Both supported and free-standing mats consisting of anatase nanofibers have been successfully fabricated. Cited By This article is cited by publications. Tanner Rosenthal, J. Mark Weller, Candace K. DOI: Luiza A.
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